Abstract
A silicon-based high integration frequency reconfigurable monopole is demonstrated in this paper. To meet the development of the modern communication systems, a high resistivity silicon wafer is used as the monopole substrate to improve the integration of antenna systems, and manufacturing technology for this monopole is compatible with the traditional silicon machining processes. Based on the optimized structural parameters, the monopole’s resonant frequencies at 3.73 GHz and 3.85 GHz have been achieved by changing the active length of this antenna, and the radiation efficiencies of the reconfigurable antenna at two working states are 78.66% and 73.17%, respectively. Other radiation characteristics of this monopole also shown good performance in this paper. Simulation and experimental results show excellent agreement, which have shown the validity of the antenna design. Therefore, this antenna is more suitable for modern wireless communications, and a novel high integration solid state plasma reconfigurable antenna based on silicon-based surface PiN diodes will be designed for further investigation.
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