Abstract
The studies were performed based on various composites to improve the features of Magnetic Tunnel Junction (MTJ) memory devices. We have studied the electrical and electronic properties of Ni 3 GeFe 2 and Fe 3 GeTe 2 . MgO-hBN-MgO is used as a composite dielectric material. The ferromagnetic material Ni 3 GeFe 2 and Fe 3 GeTe 2 have shown improvement in various electronic and magnetic properties that can be useful for further implementation in MTJ device. The Ni 3 GeFe 2 and Fe 3 GeTe 2 predicted good magneto-transport property that characterizes their ferromagnetic state. In oxide layer the direct bandgap of 1.0437eV at Gamma point is obtained. The validation of Ni 3 GeFe 2 and Fe 3 GeTe 2 as ferromagnetic layer is predicted as it showed 0eV bandgap. Local Density of State (LDOS) of FM and oxide layer is calculated along with it the electron transport is observed in z direction. It is found that these two ferromagnetic (FM) materials showed a high Curie temperature. The DOS and Band Structure of Fe is compared with Ni 3 GeFe 2 , Fe 3 GeTe 2 . In comparison with the DOS of Fe showed peak at the valance band i.e. 0.45eV and 0.69eV which shows instability of memory states, as in case of Ni 3 GeFe 2 and Fe 3 GeTe 2 (stable FM materials) the peaks were observed is conduction band. The study depicts that Ni 3 GeFe 2 and Fe 3 GeTe 2 are promising candidate for its implementation in MTJ memory device. As they show better edge boundaries and good stability of states.
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