Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications

Abstract

This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is performed for gate length (Lg) = 16 nm at 10μA/μm to focus the weak/moderate inversion region of operation. The results show a whooping amount of reduction in terms of output conductance (gds) (∼88.8%) due to the screening effect thereby enhancing the intrinsic gain (AV) (∼28.97%) of the DMG-JL-NSFET as compared to SMG-JL-NSFET. It is also found that the cut-off frequency (fT) and maximum oscillation frequency (fMAX) are increased by an amount of ∼11.82% and ∼2.91% respectively for DMG-JL-NSFET. Furthermore, it is elucidated that increasing the metal gate work function work difference (ΔW = φms-φmd) reduces the analog/RF performance of the DMG-JL-NSFET. The analysis revealed that increasing the ΔW from 0.3eV to 0.7eV deteriorates AV, fT, fMAX by an amount of ∼17.35%, ∼19.21%, and ∼37.57% respectively. Moreover, the implementation of HfO2 as high-k gate dielectric as a replacement for SiO2 degrades the analog/RF efficiency of DMG-JL-NSFET. Moreover, the DMG-JL-NSFET has provided a greater fT (∼224 GHz)/fMAX (∼342 GHz) indicating a promising candidature for future beyond 5G (B5G) applications.