Abstract
AbstractA quantitative and yield analysis of low noise amplifier has been done using a noise amplifier cancellation technique for high sensitivity receiver. Wide bandwidth, low noise figures (NF), and high power gain are achieved by using a common source path and common gate path with a single inductor at a common source path. Proposed LNA is designed using UMC 90 ηm complementary metal-oxide-semiconductor technology, proposed low noise amplifier packaged, achieves a maximum power gain of 20.5 dB, the noise figure of 2–2.5 dB at 1.2 V supply.KeywordsComplementary metal oxide semiconductor (CMOS)Low noise amplifier (LNA)Common source (CS)Common gate (CG)
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