Abstract
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of MBCFET. The electrical performances such as on-current, threshold voltage and potential distributions along the channel are conducted by using the Silvaco TCAD simulator. It was found that the strained JL MBCFET performs better compared to unstrained JL MBCFET. The results show that by inducing strain on JL MBCFET, the on-current increased by 29%, threshold voltage shifted by 0.25 V and potential in the centre of the channel was reduced by 13 %.
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