Abstract
In this paper, a novel heterojunction tunnel field-effect transistor (HTFET) using Sentaurus technology computer-aided design (TCAD) simulations has been presented. The InAs/GaSb compound materials are used in both single gate heterojunction TFET (SG-HTFET) and Double gate heterojunction TFET (DG-HTFET) with SiO2 gate oxide layer to increase performance of the device.The implemented SG-HTFET and DG-HTFET device are increase the TFET's cross-sectional tunnel area. This result develops the subthreshold swing (SS) by 2.45 times, drive current (ION) is close to 10-6 A/µm, leakage current (IOFF) is close to 10-17 A/µm and also diminish the ambipolarity of the device compared to the TFET.
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