Performance Analysis of Compound III-V Semiconductor Materials based MOSFET

Abstract

Complementary metal-oxide semiconductor (CMOS) technology is the most frequent technology used in the semiconductor industries. Its integration in integrated circuits (ICs) shows effective response and motivates to enhance the performance of electronic gadgets. However, due to the slight low ON-current and high OFF -current of metal-oxide semiconductor field-effect transistor (MOSFET), research is going on for the replacement of MOSFET for getting better ON-current to OFF-current ratio. The research on III- V semiconductor materials based MOSFE Ts shows better result and it seems that using III-V semiconductor material enhances the performance. So, in this report we have analysed the M OSFE T characteristics with the combinational arrangements of III and V group semiconductor materials, so that we could know which III- V semiconductor materials are reliable. The drain current characteristics of III- V MOSFETs have been observed to establish the comparative analysis of ON-current, OFF-current, ON-current to OFF-current ratio, and DIBL effect. The observed results are compared with the characteristics of Silicon based MOSFET to benchmark the device performance.