Abstract
Recent focus of the VLSI industry has been on performance enhancement of semiconductors by introducing alternate channel materials. In this work, we have studied electronic properties of 2 dimensional hexagonal shaped aluminum nitride (2D h-AIN) as a channel material in n-MOS transistor. With Density Functional Theory (DFT), we have calculated 2D h-AIN to understand it's electronic properties and carried out non-equilibrium Green's function (NEGF) simulations to study device performance. Our studies reveal good MOS device properties in terms of drain current (86.45 (μA/μm), transconductance (296 (iS/jim) and ON/OFF ratio (1.57 × 104), which enhances the scope of further research on 2D h-AIN FET.
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