Abstract

Tin selenide (SnSe) is an auspicious light-harvesting material in photovoltaic (PV) technology due to its larger absorption coefficients and earth-abundance nature. However, because of the potential difficulty of defect-free fabrication, and non-optimized electron transport layer (ETL) and hole transport layer (HTL) alignment, it could no longer achieve its realistic objectives. Therefore, designing a suitable SnSe-based PV device with an appropriate ETL and HTL is crucial to achieving optimum performance. In this research, we proposed a novel heterojunction thin-film solar cell (TFSC) configuration of Ni/Cu2O/SnSe/WS2/FTO/Al and simulated its PV performance metrics using SCAPS-1D solar cell simulation software. This research additionally provided a comparative performance analysis of the SnSe TFSC with numerous ETLs and HTLs. It is evident that the suggested TFSC with WS2 ETL and Cu2O HTL creates appropriate band alignment with the SnSe light harvesting layer, which reduces charge recombination at both the ETL/absorber and absorber/HTL interfaces. Here, the impact of absorber layer thickness, doping concentration, bulk defect density, and defect density at the ETL/absorber and absorber/HTL interfaces is investigated. Besides, the impact of radiative recombination, back contact metal work function, and working temperature are carefully examined. After optimization of all the material properties, a maximum efficiency of 29.31 % with open circuit voltage (Voc) of 0.89 V, short circuit current density (Jsc) of 38.23 mA/cm2, and fill-factor (FF) of 86.30 % were attained for the SnSe-based proposed structure. Furthermore, a supervised linear regression machine learning algorithm is employed to investigate how the behavior of the material attributes affects the solar cell's designed PV performance. Overall, our findings can be helpful to experimentalists to fabricate inexpensive, highly efficient, and Cd-free SnSe-based heterostructure solar cells in the near future.

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