Perforated (In)GaSb quantum wells on GaSb substrates through the use of As2 based in situ etches

Abstract

The authors investigate the etch modes of GaSb (100) through use of Arsenic (As2) based in situ etching. Three distinct etch modes result from temperature dependent in situ etching. The authors have used this in situ etch process on highly strained (In)GaSb quantum wells (QWs) and have studied the dependence of the in situ etching on substrate temperature and indium composition in the quantum well. The etched quantum wells are capped with an Al0.5Ga0.5Sb barrier and the photoluminescence properties are studied. The authors observe inhomogeneous broadening indicating the possible presence of quantum-sized features with different shapes and sizes.