Perfect plasmonic absorbers for photovoltaic applications

Abstract

A novel regime of perfect absorption in a thin plasmonic layer corresponds to a collective mode of an array of plasmonic nanospheres. In our theoretical study we show that the absorption of the incident light occurs mainly in the semiconductor material hosting plasmonic nanospheres, whereas the absorption in the metal is very small. The regime survives when the uniform host layer is replaced by a practical photovoltaic cell. Trapping the light allows the thickness of the doped semiconductor to be reduced to values for which the degradation under light exposure should be insufficient. The light-trapping regime is compatible with both the metal-backed variant of the photovoltaic cell and its semitransparent variant when both electrodes are preformed of a conductive oxide. Negligible parasitic losses, a variety of design solutions and a reasonable operational band make our perfect plasmonic absorbers promising for photovoltaic applications.