Abstract
Under sufficient electrical bias, electron percolation in nanocrystalline silicon can lead to rapid self-heating and formation of highly conductive, molten filaments, and local crystallization upon cooling. Self-heated nanocrystalline silicon nanowires are modeled using 2-D finite element simulations using temperature dependent material parameters. Nanocrystalline silicon is modeled as randomly distributed isolated crystalline grains embedded in an amorphous matrix. Highly conductive, nanometer-width molten filaments form from percolation paths at the beginning of nanosecond voltage pulses. In a short period of time, the most conductive filament starts drawing all the current (with current densities > 100 MA/cm2) while the remaining percolation paths resolidify.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
