Abstract
We studied magnetic properties of thin Ge:Mn films obtained by implantation of Mn+ ions into a single crystalline bulk germanium. In the net magnetic moment we were able to separate contributions originating from dispersed Mn2+ ions, ferromagnetic Mn5Ge3 precipitates, and regions of the germanium matrix enriched with diluted manganese -MnmGen alloys. In the subsystem of dispersed Mn2+ ions we observed a percolation transition into the ferromagnetic state at T13 K. Collective excitations, standing spin waves, were also detected below this temperature. The main parameters of the exchange interaction obtained from the analysis of the experimental spin-wave resonance data are consistent with results acquired from static magnetic measurements as well as with theoretical estimations for a percolation ferromagnet. Thus, we demonstrate that low-temperature magnetic properties of group IV magnetic semiconductor can be successfully explained within a magnetic polaron model.
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