Abstract

Controlling the defect in the perovskite absorber layer is a very crucial issue for developing highly efficient and stable perovskite solar cells (PSCs) as it exhibits the existence of unavoidable defects even after the careful fabrication process. In this study, the presence of defects in the perovskite layer has been evaluated through the analysis of its structural and optical properties. Then the investigations on the impact of defect density on perovskite absorber layer and its associated solar cell parameters have been carried out by numerical simulation utilizing SCAPS-1D software. Besides the defect density, the thickness of the absorber layer has also been varied to find optimum values of cell parameters. It has been found that when the thickness of absorber and shallow defect density is increased from 200 nm to 800 nm and 1 × 10 13 cm -3 to 1 × 10 18 cm -3 respectively, power conversion efficiency (PCE) is varied from 26.7% to 0.90%. However, when the thickness and deep defect density are raised from 200 nm to 800 nm and 1 × 10 13 cm -3 to 1 × 10 16 cm -3 , respectively, the PCE is varied from 19.3% to 6.15%. It is revealed that optimum absorber thickness is 550 nm and the tolerances of shallow level and deep level defect density are 1 × 10 17 cm -3 and 1 × 10 15 cm -3 , respectively.

Highlights

  • Perovskite solar cells (PSCs), which include perovskite structured compound as a light absorber layer, have quickly appeared as the most favorable photovoltaic technology

  • This study evaluates the presence of defects in the perovskite layer by a thorough investigation of its structural and optical properties

  • Simulation results show that, when shallow level defect density in the perovskite absorber layer is increased from 1 × 1013 cm−3 to 1 × 1018 cm−3, the power conversion efficiency (PCE) decreases from 26.7% to 0.9%

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Summary

Introduction

Perovskite solar cells (PSCs), which include perovskite structured compound as a light absorber layer, have quickly appeared as the most favorable photovoltaic technology. It is because of the noble electrical and physical properties of perovskite such as direct (1.5 eV) and tunable bandgap (1.2 eV to 3.17 eV), low exciton binding energy (∼20 meV) at room temperature [1]–[3], high bipolar conductivity (10−2 − 10−3 Scm−1), high carrier mobility (∼20 cm2V−1s−1 ) [4], [5], high absorption coefficient (1.5 × 104 cm−1 at 550 nm), long electron-hole diffusion.

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