Abstract
We report on the fabrication of dual-gate organic thin-film transistors using plasma-enhanced atomic layer deposited 150 nm thick Al 2 O 3 and 300 nm thick parylene as gate dielectrics and pentacene as a semiconductor. The threshold voltage (V th ) is changed from 14.5 to -1.5 V when the voltage bias of the top-gate electrode is changed from -10 to 20 V. The voltage transfer characteristics of an inverter with a dual-gate driver transistor and a single-gate load transistor, specifically, swing range and inversion voltage, have been artificially controlled by changing the voltage bias of the top-gate electrode.
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