Abstract
The forward and reverse current density–voltage ( J– V) and capacitance–voltage ( C– V) characteristics of pentacene/n −-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n −-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79–1.0 eV and 2.4–2.7, respectively. The C– V analysis suggests that the depletion layer appears selectively in the n −-Si layer with a thickness of 1.47 μm from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm 2.
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