Abstract
Photovoltaic diodes based on iodine- and bromine-doped pentacene single crystals as well as thin films (TFs) have been prepared. Two different device structures, a Schottky diode with a Mg/Al back contact and a heterojunction with a ZnO:Al window layer, are investigated. An immense increase of the photovoltaic conversion efficiency of these devices is observed upon doping with iodine as well as bromine, which is ascribed to a reduction of the series resistance, an increase in quantum efficiency, and a red shift of the absorption spectrum. AM1.5 efficiencies of 2.7 and 4.5% are obtained for single crystal Schottky diodes and heterojunctions, respectively. In addition, efficiencies exceeding 2% are realized in TF devices on flexible plastic substrates.
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