Pentacene-based depletion load pMOS inverter realized by threshold voltage control utilizing nitrogen-doped LaB6 interfacial layer

Abstract

In this study, a depletion load pMOS inverter, which is called an enhancement/depletion (E/D) inverter, with a single organic semiconductor was demonstrated utilizing threshold voltage controlled pentacene-based organic field-effect transistor (OFET) realized by a nitrogen-doped (N-doped) LaB6 interfacial layer (IL). It was found that a N-doped LaB6 IL introduced in drive OFET realized the inverter characteristic with logic swing of 4.3 V at an operation voltage of −5 V. In addition, a common-gate electrode structure for drive and load OFETs was demonstrated, which would contribute to further scaling and high integration of organic devices.