Abstract
This work proposes an Al/Pentacene:CuO/ PEDOT:PSS/ITO structure based photodetector fabricated on an indium-tin oxide (ITO) coated glass substrate by low-cost solution method. The device uses Pentacene:CuO nanocomposite as the active layer and PEDOT:PSS as the hole transport layer (HTL). The proposed device shows a broadband photodetection properties with responsivities of ~35.25 A/W, ~8.74 A/W and ~2.75 A/W at wavelengths of ~380 nm (UV), ~600 nm (visible) and ~980 nm (NIR) under 1 V reverse bias voltage, respectively. The device also shows the self-biased property with the maximum responsivity of ~14.4 mA/W at ~600 nm under zero bias operation. The repeatability and stability of the device have been observed through repetitive device fabrication with subsequent measurements.
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