Penetration Depth of Diffusion-Induced Dislocations

Abstract

To estimate the penetration depth of diffusion-induced dislocations, the depth of the neutral plane of internal stress is obtained quantitatively in values relative to the junction depth of the usual diffusion profiles. The following two cases are considered: (1) the stress distribution is due mainly to the distribution of impurity atoms and (2) the stress is relieved by the generation of a majority of dislocations. The shallow penetration of (1/3–2/3)Xj observed so far is explained by case (1). Deep penetration beyond the junction is shown to be generally possible only in case (2) and at this time, the change of the depth of the neutral plane depends on the moment of the dislocation distribution. It is also explained that the force on a dislocation due to the diffusion-induced stress causes the climbing motion.