Penetration depth and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 polycrystalline films by ferromagnetic resonance and spin pumping

Abstract

Spintronics relies on the spin dependent transport properties of ferromagnets (Fs). Although antiferromagnets (AFs) are used for their magnetic properties only, some fundamental F-spintronics phenomena like spin transfer torque, domain wall motion, and tunnel anisotropic magnetoresistance also occur with AFs, thus making AF-spintronics attractive. Here, room temperature critical depths and absorption mechanisms of spin currents in Ir20Mn80 and Fe50Mn50 are determined by F-resonance and spin pumping. In particular, we find room temperature critical depths originating from different absorption mechanisms: dephasing for Ir20Mn80 and spin flipping for Fe50Mn50.