Abstract
Pendellösung interferometry is one of the technique for accurate determination of the structure factors of crystals. Observation method of Pendellösung fringes by using pulsed cold neutrons and the time-of-flight analysis were established. We measured the nuclear scattering length of silicon by the Pendellösung fringes with pulsed neutrons as (4.125±0.003(stat.)±0.028(syst.)). This indicates the applicability of Pendellösung interferometry at high-intensity pulsed neutron facilities for various precision measurements.
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