Abstract
A Peltier cooled long wavelength infrared (LWIR ) position sensitive photon detector (PSD) based on the lateral effect is reported for the first time. It is a modified PIN LWIR HgCdTe photodiode forming the tetra lateral PSD of the photosensitive area 1×1 mm2, cooled to 205 K, optimized for the 4-11 µm wavelength band and reverse biased. The position resolution close to 1 µm was achieved with 32x averaging of 100 ns QCL laser pulses of the 10.5 µm wavelength and the 0.3 nJ energy focused on the spot of 240 µm 1/e2 diameter, with the box-car integration times of 1 µs and correlated double sampling.
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