Abstract
The Si L2,3 and C K soft X-ray emission spectra of the interface of the Ti(50 nm)/4H-SiC(substrate) system, thermally annealed from 800°C to 1000°C and characterized by soft X-ray emission spectroscopy (SXES), revealed the formation of a reacted region composed of silicides with Ti 5 Si 3 as the majority formed species and carbides in TiC-like bonding. Also, the photoemission electron microscopy (PEEM) imaging of Ti(10 nm) film on 3C-SiC surface during in situ heat treatment showed the formation of island structures (in ring clusters) at ~ 800°C.
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