Abstract
SiO 2 thin films were obtained by microwave plasma-enhanced chemical vapour deposition. Plasmas with two different gas mixtures were studied: Ar/O 2/SiH 4 and O 2/SiH 4, the gas ratio R = O 2 SiH 4 varying from 0.5 to 10 with two radio frequency (RF) bias powers (0 and 100 W). Seventeen dielectric layers with a thickness around 500 nm were studied to determine their chemical composition by X-ray photoelectron spectroscopy (XPS) and valence-band studies, Rutherford backscattering spectroscopy (RBS) and elastic recoil detection analysis (ERDA), infrared spectroscopy (IRS) and electronic spin resonance (ESR). These samples could then be classified into three groups corresponding to different SiOH and SiH or only SiOH concentrations. Their stoichiometries were also determined. An explanation of the valence-band shift and its modifications is proposed.
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