Abstract
Microcrystalline silicon carbide films have been prepared by plasma enhanced chemical vapour deposition of fluorinated source gases diluted with hydrogen. The conductivity, activation energy, Hall mobility, optical transmission and reflection, infra red absorption and transmission electron microscopy have been used to characterize these films. The effect of the deposition parameters especially the hydrogen dilution and power density are reported here. The material properties have been correlated with the concentrations and reactions of fluorine and hydrogen atoms during film growth.
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