Abstract

AbstractThe process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of high‐purity SiF4 and H2 sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was investigated. The structure and impurity content of the produced layers as well as of the grown crystal have been studied (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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