Abstract
The electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration are reported. We have observed anisotropy of the electron concentration and mobility measured at a low magnetic field in the [110] and \(\left[ {1\bar 10} \right]\) crystallographic directions. It has been established by analysis of Shubnikov-de Haas oscillations that the conductivity through the two-dimensional electron channel InSb/AlInSb quantum well (QW) does not depend on the crystallographic direction. However, the magnetic-field dependences of the Hall coefficient and resistivity of the structures reveal a strong influence of the crystallographic directions. This has allowed one to conclude that the anisotropy of the electron transport parameters in the QW structures measured at low magnetic fields correspond to parasitic conductivity through the Al0.09In0.91Sb buffer layer with two pronounced anisotropic contributions: the influence of metallic In nanoclusters inhomogeneously distributed within the buffer layer and conductivity of the near-interface layer with a high anisotropic density of extended defects.
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