Abstract
Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with significantly different diffusion coefficients, and subsequent phase transition from a carbon quasi-liquid to graphene layer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
