Abstract
Results are reported on characterization of the field electron emission from diamond films grown by dc arc discharge plasma CVD onto Si substrates from CH 4 -H 2 gas mixtures. The field electron emission was observed at 15-20 V/μm. Emission current-voltage dependences were studied for films prepared at different CVD conditions and post-growth surface treatment/ modification (ultrathin metal and metal oxide coatings, MW-plasma processing, laser-induced surface graphitization). Features of emission current versus applied field behaviour (including a hysteresis phenomenon, vacuum arc initiation) and ultralow (0.1-0.5 eV) values of effective work function derived from Fowler-Nordheim plot fitting are discussed. A high vacuum scanning tunneling-field emission microscope was applied for simultaneous mapping of field electron emission intern-sity. topography and work function to study electronic and structural properties of field emission centers.
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