Abstract
For investigation of the catastrophic optical damage (COD) of InGaAsP material systems emitting at 0.8 μm, separate-confinement-heterostructure single-quantum-well structures grown on (100) GaAs substrate by liquid-phase epitaxy were mesa-etched for buried heterostructure (BH) laser diodes. The single mode InGaAsP/InGaP diodes were cw operated at room temperature. The measured COD level of a BH InGaAsP/InGaP laser with a cavity length of 470 μm was 8.6±0.7 (MW/cm2). Particularly, we could not observe COD in the long cavity InGaAsP/InGaP lasers, but they showed thermal saturation which is reversible. Also, InGaAsP lasers were found to sustain high current injection three times more strongly than AlGaAs counterparts.
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