Abstract
The well known increase of the Hall coefficient with temperature in SnTe is usually explained bythe double valence band model. SnTe is synthesized and crystallized by various methods. In the concentration interval of carriers of 4 × 1019 to 5 × 1020 cm−3 it is often found, that the curves RH(T) are crossed, a fact, which cannot be explained with the model above mentioned. A model of thermally generated Frenkel-type defects of Te-atoms is proposed. As result of the generation hole traps occur with two distinct energy levels. The low-temperature level depends on carrier concentration (on the concentration differences between the vacancies of Sn and Te). The high temperature level is connected with the dopands. The exponent a in the temperature dependence of mobility, μ ∽ T−a in the range. RH = const depends elementarily on the compensation coefficient (ratio of the concentrations of the tellur and tin vacancies). [Russian Text Ignored].
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