Abstract
Zinc oxide thin films made by pulsed reactive magnetron sputtering combined with RF ECWR plasma on FTO or ITO substrates exhibit high photoelectrochemical activity for water splitting under UV light, but are unstable against photocorrosion. It can be suppressed by a protective layer of SnO2 made by atomic layer deposition. The SnO2 layer is quasi-amorphous in the as-received state, but the thermal treatment causes partial crystallization to cassiterite, without significant change of the optical band gap. Ferrocene in acetonitrile electrolyte solution is a useful redox probe for the blocking-quality tests of thin films of n-semiconductors. Both ZnO and SnO2 are sensitive to irreversible electrochemical doping at potentials negative to the flatband potential. The flipping of electrochemical work functions of the Zn-terminated (0001) and O-terminated (000–1) faces of ZnO (wurtzite) takes place in acetonitrile vs. aqueous electrolyte solutions. The potentials for photocurrent onset are near the flatband potentials in an aqueous electrolyte solution for both ZnO and SnO2.
Published Version
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