Abstract
Peculiar current jumps and hysteresis in current–voltage curves are reported in an illuminated heterostructure consisting basically of a thick AlAs layer and a narrow GaAs quantum well. These novel features come from the photon-assisted transfer of electron–hole pairs and the resultant charge polarization in the structure, mainly caused by the resonant Γ–X coupling at the heterointerfaces. Using the transfer-matrix method, the simulated current density–voltage curve reproduces the main features of the experimental observations in the case where the influence of resonant Γ–X coupling at the heterointerfaces is included, further confirming the physical mechanism involved. The structure presented here may be used as a new type of photonic memory cell and also as an optically controlled switch.
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