Abstract
The lamellar structure of Al single crystals grown in pure and Sn-doped Al films in the presence of oxygen contamination is investigated by cross sectional transmission electron microscopy. The lamellae are parallel with the Al(111) planes. According to the EELS investigations of Al-20% Sn films, the lamellae are separated by interface layers containing oxygen and Sn. The lamellar structure is a growth structure formed by the nucleation and growth of islands of the lamellae. The interface can be formed by the process-induced segregation of oxygen on the (111) Al crystal faces.
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