Abstract
We studied the peak width of current vs voltage (I–V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I–V characteristics of TBRTDs was developed by taking the structural inhomogeneity into account to explain the experimental peak width. The fluctuation of the well width in a TBRTD grown by OMVPE was estimated as two atomic layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.