Abstract
We studied the peak width of current vs voltage (I–V) characteristics of triple-barrier resonant tunneling diodes (TBRTDs) experimentally and theoretically. A GaInAs/InP TBRTD was fabricated by organo metallic vapor phase epitaxy (OMVPE). A theory of I–V characteristics of TBRTDs was developed by taking the structural inhomogeneity into account to explain the experimental peak width. The fluctuation of the well width in a TBRTD grown by OMVPE was estimated as two atomic layers.
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