Abstract
AbstractResults are presented for the kinetics of growth of Pd2Si interfacial layers obtained by an X-ray diffraction technique. Epitaxial Pd2Si films were grown on Si(111) substrates over a temperature range of 160–222°C. The parabolic rate law observed is in qualitative agreement with those reported by investigators using other techniques (RBS, AES, Electron Microprobe). There appear to be two kinetics regimes distinquished by diffusion paths with different activation energies (1.35±0.10 eV vs. 1.05± 0.10 eV). The presence of impurities and the detailed Pd 2Si microstructure will influence how the reacting species are transported through the lattice.
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