Abstract

Metallic oxide and the perovskite crystals easily form the surface vacancies defects at the contact interface after the perovskite solar cells (PSCs) fabrication, which usually trap the carriers of surface of semiconductor and increase the non-radiative processes, significantly against to the PSCs performance and stability. Herein, the PCBM was employed as the interlayer between SnO2 and perovskite interfaces. The results find that the introducing of PCBM will improve the open-circuit voltage (Voc) and fill factor (FF) of devices due to the surface passivation. As a result, the n-i-p PSCs based on PCBM interlayer exhibits higher efficiency of 22.05%. Furthermore, the devices also delivered a higher light stability of 96.2% of initial performance after aging 200 h aging in atmosphere without encapsulation, meanwhile the reference PSCs exhibit 88.9% of initial performance at the same condition.

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