Abstract
(Pb,Sr)TiO3 (PST) thin films have been successfully grown on Pt-coated Si(100) wafers by the liquid source misted chemical deposition method. The PST thin film has high crystallinity, a smooth surface, and uniform elemental composition. Electrical measurements revealed the PST thin film has a high dielectric constant, low dielectric loss, and good insulating properties. These results indicate that the PST thin film is a promising material for a ULSI DRAM capacitor and other microelectronic device applications.
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