Abstract
Etching characteristics of (Pb,Sr)TiO3 (PST) thin films were investigated using inductively coupled chlorine-based plasma system as functions of gas-mixing ratio, radio frequency power and direct current bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is 56.2 nm/min and the selectivity of PST film to Pt is 0.8 at Cl2/(Cl2+Ar) of 20%. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.
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