Abstract
We have used high resolution electron beam lithography and a selective wet etching step to produce effectively buried quantum dots in InGaAs/GaAs single quantum well material. The patterning is carried out with PMMA and lift-off technique. Lateral barriers are realised by the difference in quantisation energy of a quantum well covered with GaAs as a barrier and a vacuum barrier potential wen. Dot structures of widths down to 25 nm in size have been generated. We observe high luminescence intensites even from small structures as well as a blueshift of up to 9 meV for 25 nm quantum dots.
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