Patterning of Conducting Polymers Using UV Lithography: The in-Situ Polymerization Approach

Abstract

We report on the in-situ polymerization of 3T with Cu(ClO4)2 inside several host polymers such as Novolak-based negative-tone photoresist, polystyrene (PS), poly(4-vinylphenol) (P4VP), poly(methyl methacrylate) (PMMA), and poly(4-vinylphenol)-co-(methyl methacrylate) (P4VP-co-MMA) to form an interpenetrating polymer network (IPN). Conducting IPN films in the order of 10–4–150 S/cm are obtained depending on the specific IPN composition. Moreover, the convenience of this synthetic approach has been demonstrated using a commercially available negative-tone photoresist based on Novolak as a host polymer. Novolak photoresist was properly formulated with 3T and Cu(ClO4)2 to preserve as far as possible the negative lithographic characteristics of Novolak-based photoresist and generate conductive micropatterns by means of UV lithography. The CP is in situ synthesized into the Novolak matrix by a postbake after the lithography process (exposure + development). The electrical conductivity of the patterned film is 10–2 S/cm. We accurately patterned three different types of microstructures with different resolutions: interdigitated structures with a width of 100 μm, 200 μm side squares, and a 20 μm wide cross. We believe this synthetic approach is of potential application to modify the conductivity of numerous insulating polymers while preserving their physical and chemical properties.