Patterning capability of new molecular resist in EUV lithography

Abstract

We designed and synthesized a new partially-protected polyphenol, 25X-MBSA-M, for which the position and number of protected hydroxyl groups have no dispersion, and evaluated the EUV patterning performance of a chemically amplified positive-tone resist based on it. EUV imaging experiments were performed using the high-numerical-aperture (NA = 0.3), small-field EUV exposure tool (HINA) at ASET and coherent illumination ( σ = 0.0). Patterning results showed the resolution of the resist to be 28 nm at an EUV exposure dose of 12.2 mJ/cm 2, the obtainable aspect ratio to be as high as 2, and the line-edge roughness (LER) to be small, with 3 σ being 3.6 nm for 45-nm line-and-space patterns and an inspection length, L, of 2000 nm. In addition, pattern collapse was markedly suppressed.