Abstract
In the present work a technique to impart a controlled deformation to a substrate through deposition of a thin film is shown. Such a technique allows film–substrate systems to be tailored with a desired shape for various applications. An analytical model has been applied to calculate the displacements and stresses of a patterned crystalline substrate. Analytical results have also been validated via Finite Element simulations. Si substrates have been patterned with Si 3N 4 and measurements of the transverse displacement were found to agree with the theoretical predictions.
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