Patterned growth of tungsten diselenide flakes by chemical vapor deposition

Abstract

By introducing prepatterned Pt/Ti dots, arrays of WSe2 flakes have been successfully grown on SiO2 substrates by chemical vapor deposition, opening a new pathway for the large-scale production of WSe2-based devices. The WSe2 flakes are high-quality single crystals characterized by transmission electron microscopy and Raman spectroscopy. Field-effect transistors were fabricated on these WSe2 flakes, and the field effect mobility was measured to be 11.0 cm2 V−1 s−1 and an on/off ratio of ∼106 was achieved. The growth of highly patterned WSe2 flake arrays facilitates the fabrication of WSe2 flake-based integrated devices.