Abstract
A replacement for gold as the hole-injecting metal in organic electronic devices is presented: patterned graphene electrodes prepared from graphite oxide sheets by oxygen plasma etching. Solution-processed organic FETs with poly(3-hexylthiophene) as the semiconductor and these graphene electrodes are shown to perform as well as or even better than devices with gold contacts. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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