Pattern Stimulated CVD Growth of 2D MoS2

Abstract

AbstractGreat efforts have been explored to prepare monolayer MoS2 through chemical vapor deposition (CVD) method. However, there still were many shortages in CVD method. Herein, with the mixture of MoS2 powders and sodium thiosulfate (Na2S2O3) powders as two precursors, monolayer MoS2 has been successfully grown at a temperature as low as 500 °C through a convenient pattern stimulated CVD growth method in combination with a pattern transfer process. The triangular, hexagonal and larger‐scale monolayer MoS2 have been obtained distributing on both sides of the precursor. Our analysis indicates that the thickness and shape of the spatially separated domains are the function of the distance to the patterned precursor, resulting from different concentration of precursors and atomic ratio of Mo : S. The atomic ratio of Mo : S near to 1 : 2 was beneficial to the preparation of larger‐scale monolater MoS2. The intensity and peak shifting of PL demonstrated the defects and strain in monolayer MoS2. This facile patterned stimulated growth strategy has paved a pioneering way to obtain high quality 2D materials.