Pattern formation of nanoflowers during the vapor–liquid–solid growth of silicon nanowires

Abstract

Pattern formation of nanoflowers during the vapor–liquid–solid growth of Si nanowires is reported. Using transmission electron microscopy, scanning electron microscopy, and energy dispersive spectrometer analysis, we show that the flower consists of an Au/SiO x core–shell structure. Moreover, the growth of flower starts at the interface between the gold catalyst and the silicon nanowire, presumably by enhanced oxidation at this interface. The pattern formation can be classified as dense branching morphology (DBM). It is the first observation of DBM in a spherical geometry and at the nanoscale. The analysis of the average branching distance of this pattern shows that the pattern is most likely formed during the growth process, not the cooling process, and that the curvature of the gold droplet plays a crucial role in the frequency of branching.