Pattern Dependence of Epitaxial-Realignment in Direct Silicon Bonded (DSB) Substrates with Hybrid Crystal Orientation

Abstract

Direct Silicon Bonded Si (DSB) technology with amorphization templated recrystallization process enables a relatively simple integration of CMOSFET using hybrid orientation bulk substrates. The absence of oxide at the bonding interface enables the change of the orientation of the donor Si film to that of the handle substrate after amorphization and recrystallzation. Therefore, an epitaxial realignment is caused by the absence of oxide at the bonding interface during the high-temperature annealing for recrystallzation. This paper describes the issues concerning the epitaxial realignment of DSB hybrid orientation bulk substrates, focusing on the pattern structure and rotation angle of donor layer and handle wafer dependence.