Abstract
We analytically study the photorefractive Gunn effect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by I 0 , is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When I 0 is sufficiently large, the space-charge field induced by the MIP will compete with the PDT and result in complex dynamics, including driven chaos via quasiperiodic route.
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